Matthew Peart | Princeton Infrared Technologies

Matthew Peart

Device Scientist

Matthew has expertise in device design, simulation and fabrication experience with a variety of materials including InP, Si, and III-Nitride semiconductors. Most recently he has led the development of next generation Geiger mode avalanche photodiode arrays for LiDAR used in autonomous vehicles while working at Argo AI. Previously, he worked on III-V integration with silicon for highly integrated photonic integrated circuits used in telecommunications and LiDAR at Skorpios Technologies, Inc. During his PhD, Matthew worked on the design, simulation and fabrication of next-generation high-voltage power devices using wide bandgap III-Nitride materials and developed several novel device designs and processing techniques to realize these devices. Matthew holds a B.S. in electrical engineering from Villanova University and a M.S. and Ph.D. in electrical engineering from Lehigh University.

  1. M. R. Peart, N. Tansu, and J. J. Wierer, Jr.,"AlInN for Vertical Power Electronic Devices", IEEE Trans. Elec. Devices, 65 (2018). DOI: 10.1109/TED.2018.2866980
  2. X. Wei, S. A. A. Muyeed, M. R. Peart, W. Sun, N. Tansu, and J. J. Wierer, Jr., “Room Temperature Luminescence of InGaN Quantum Dots Formed by Quantum-Sized-Controlled Photoelectrochemical Etching”, Appl. Phys. Lett., 113, 121106 (2018). DOI: 10.1063/1.5046857
  3. M. R. Peart, X. Wei, D. Borovac, W. Sun, N. Tansu, and J. J. Wierer, Jr.,“Thermal Oxidation of AlInN for III-nitride Electronic and Optoelectronic Devices”, ACS Applied Electronic Materials, 1, 1367-1371 (2019). DOI: 10.1021/acsaelm.9b00266
  4. S. A. A. Muyeed, W. Sun, M. R. Peart, R. M. Lentz, X. Wei, D. Borovac, R. Song, N. Tansu, and J. J. Wierer, Jr., “Recombination rates in green-yellow InGaN-based multiple quantum wells”, J. Appl. Phys,. 126, 213106 (2019). DOI: 10.1063/1.5126965
  5. M. R. Peart, and J. J. Wierer, Jr., "Edge Termination for III-Nitride Power Devices using Polarization Engineering", IEEE Transactions on Electron Device, 67, 571 (2020). DOI: 10.1109/TED.2019.2958485